Electrical Characterizations of Planar Ga(2)O(3) Schottky Barrier Diodes

In this work, a Schottky barrier diode (SBD) is fabricated and demonstrated based on the edge-defined film-fed grown (EFG) Ga(2)O(3) crystal substrate. At the current stage, for high resistance un-doped Ga(2)O(3) films and/or bulk substrates, the carrier concentration (and other electrical parameters) is difficult to be obtained by using the conventional Hall measurement. Therefore, we extracted the electrical parameters such as on-state resistance (R(on)), Schottky barrier height ([Formula: see text]), the ideal factor (n), series resistance (R(s)) and the carrier concentration (N(d)) by analyzing the current density–voltage (J–V) and capacitance–voltage (C–V) curves of the Ga(2)O(3)-based SBD, systematically. The detailed measurements and theoretical analysis are displayed in this paper.