Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode

In this study, we proposed a rectifying drain electrode that was embedded in a p-GaN gate AlGaN/GaN heterojunction field-effect transistor to achieve the unidirectional switching characteristics, without the need for a separate reverse blocking device or an additional process step. The rectifying dr...

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Detalles Bibliográficos
Autores principales: Kim, Tae-Hyeon, Jang, Won-Ho, Yim, Jun-Hyeok, Cha, Ho-Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8000989/
https://www.ncbi.nlm.nih.gov/pubmed/33802182
http://dx.doi.org/10.3390/mi12030291

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8000989/
https://www.ncbi.nlm.nih.gov/pubmed/33802182
http://dx.doi.org/10.3390/mi12030291

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