Kinetics of Guided Growth of Horizontal GaN Nanowires on Flat and Faceted Sapphire Surfaces

The bottom-up assembly of nanowires facilitates the control of their dimensions, structure, orientation and physical properties. Surface-guided growth of planar nanowires has been shown to enable their assembly and alignment on substrates during growth, thus eliminating the need for additional post-...

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Detalles Bibliográficos
Autores principales: Rothman, Amnon, Maniš, Jaroslav, Dubrovskii, Vladimir G., Šikola, Tomáš, Mach, Jindřich, Joslevich, Ernesto
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8002117/
https://www.ncbi.nlm.nih.gov/pubmed/33802317
http://dx.doi.org/10.3390/nano11030624

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8002117/
https://www.ncbi.nlm.nih.gov/pubmed/33802317
http://dx.doi.org/10.3390/nano11030624

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