Analysis of Threshold Voltage Shift for Full V(GS)/V(DS)/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical e...

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Detalles Bibliográficos
Autores principales: Kim, Je-Hyuk, Jang, Jun Tae, Bae, Jong-Ho, Choi, Sung-Jin, Kim, Dong Myong, Kim, Changwook, Kim, Yoon, Kim, Dae Hwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8003586/
https://www.ncbi.nlm.nih.gov/pubmed/33808738
http://dx.doi.org/10.3390/mi12030327

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8003586/
https://www.ncbi.nlm.nih.gov/pubmed/33808738
http://dx.doi.org/10.3390/mi12030327

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