Retention Enhancement in Low Power NOR Flash Array with High-κ–Based Charge-Trapping Memory by Utilizing High Permittivity and High Bandgap of Aluminum Oxide

For improving retention characteristics in the NOR flash array, aluminum oxide (Al(2)O(3), alumina) is utilized and incorporated as a tunneling layer. The proposed tunneling layers consist of SiO(2)/Al(2)O(3)/SiO(2), which take advantage of higher permittivity and higher bandgap of Al(2)O(3) compare...

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Detalles Bibliográficos
Autores principales: Song, Young Suh, Park, Byung-Gook
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8003636/
https://www.ncbi.nlm.nih.gov/pubmed/33808915
http://dx.doi.org/10.3390/mi12030328

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8003636/
https://www.ncbi.nlm.nih.gov/pubmed/33808915
http://dx.doi.org/10.3390/mi12030328

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