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Retention Enhancement in Low Power NOR Flash Array with High-κ–Based Charge-Trapping Memory by Utilizing High Permittivity and High Bandgap of Aluminum Oxide
For improving retention characteristics in the NOR flash array, aluminum oxide (Al(2)O(3), alumina) is utilized and incorporated as a tunneling layer. The proposed tunneling layers consist of SiO(2)/Al(2)O(3)/SiO(2), which take advantage of higher permittivity and higher bandgap of Al(2)O(3) compare...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2021
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8003636/ https://www.ncbi.nlm.nih.gov/pubmed/33808915 http://dx.doi.org/10.3390/mi12030328 |