Performance Enhancement in N(2) Plasma Modified AlGaN/AlN/GaN MOS-HEMT Using HfAlO(X) Gate Dielectric with Γ-Shaped Gate Engineering

In this paper, we have demonstrated the optimized device performance in the Γ-shaped gate AlGaN/AlN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) by incorporating aluminum into atomic layer deposited (ALD) HfO(2) and comparing it with the commonly used HfO(2) gate dielec...

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Detalles Bibliográficos
Autores principales: Yang, Shun-Kai, Mazumder, Soumen, Wu, Zhan-Gao, Wang, Yeong-Her
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8003925/
https://www.ncbi.nlm.nih.gov/pubmed/33801062
http://dx.doi.org/10.3390/ma14061534

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8003925/
https://www.ncbi.nlm.nih.gov/pubmed/33801062
http://dx.doi.org/10.3390/ma14061534

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