Optimal n-Type Al-Doped ZnO Overlayers for Charge Transport Enhancement in p-Type Cu(2)O Photocathodes

An effective strategy for improving the charge transport efficiency of p-type Cu(2)O photocathodes is the use of counter n-type semiconductors with a proper band alignment, preferably using Al-doped ZnO (AZO). Atomic layer deposition (ALD)-prepared AZO films show an increase in the built-in potentia...

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Detalles Bibliográficos
Autores principales: Lee, Hak Hyeon, Kim, Dong Su, Choi, Ji Hoon, Kim, Young Been, Jung, Sung Hyeon, Sarker, Swagotom, Deshpande, Nishad G., Suh, Hee Won, Cho, Hyung Koun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8004703/
https://www.ncbi.nlm.nih.gov/pubmed/33810027
http://dx.doi.org/10.3390/mi12030338

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8004703/
https://www.ncbi.nlm.nih.gov/pubmed/33810027
http://dx.doi.org/10.3390/mi12030338

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