Single-Photon Sources Based on Novel Color Centers in Silicon Carbide P–I–N Diodes: Combining Theory and Experiment

HIGHLIGHTS: Theory of electrically driven single-photon sources based on color centers in silicon carbide p–i–n diodes. New method of determining the electron and hole capture cross sections by an optically active point defect (color center) from the experimental measurements of the single-photon el...

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Detalles Bibliográficos
Autores principales: Khramtsov, Igor A., Fedyanin, Dmitry Yu.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Nature Singapore 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8006472/
https://www.ncbi.nlm.nih.gov/pubmed/34138328
http://dx.doi.org/10.1007/s40820-021-00600-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8006472/
https://www.ncbi.nlm.nih.gov/pubmed/34138328
http://dx.doi.org/10.1007/s40820-021-00600-y

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