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Single-Photon Sources Based on Novel Color Centers in Silicon Carbide P–I–N Diodes: Combining Theory and Experiment
HIGHLIGHTS: Theory of electrically driven single-photon sources based on color centers in silicon carbide p–i–n diodes. New method of determining the electron and hole capture cross sections by an optically active point defect (color center) from the experimental measurements of the single-photon el...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Springer Nature Singapore
2021
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8006472/ https://www.ncbi.nlm.nih.gov/pubmed/34138328 http://dx.doi.org/10.1007/s40820-021-00600-y |