TEM Nanostructural Investigation of Ag-Conductive Filaments in Polycrystalline ZnO-Based Resistive Switching Devices

[Image: see text] Memristive devices based on a resistive switching mechanism are considered very promising for nonvolatile memory and unconventional computing applications, even though many details of the switching mechanisms are not yet fully understood. Here, we report a nanostructural study by m...

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Detalles Bibliográficos
Autores principales: Bejtka, Katarzyna, Milano, Gianluca, Ricciardi, Carlo, Pirri, Candido F., Porro, Samuele
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8008384/
https://www.ncbi.nlm.nih.gov/pubmed/32508083
http://dx.doi.org/10.1021/acsami.0c05038

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8008384/
https://www.ncbi.nlm.nih.gov/pubmed/32508083
http://dx.doi.org/10.1021/acsami.0c05038

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