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TEM Nanostructural Investigation of Ag-Conductive Filaments in Polycrystalline ZnO-Based Resistive Switching Devices
[Image: see text] Memristive devices based on a resistive switching mechanism are considered very promising for nonvolatile memory and unconventional computing applications, even though many details of the switching mechanisms are not yet fully understood. Here, we report a nanostructural study by m...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American
Chemical Society
2020
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8008384/ https://www.ncbi.nlm.nih.gov/pubmed/32508083 http://dx.doi.org/10.1021/acsami.0c05038 |
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author | Bejtka, Katarzyna Milano, Gianluca Ricciardi, Carlo Pirri, Candido F. Porro, Samuele |
author_facet | Bejtka, Katarzyna Milano, Gianluca Ricciardi, Carlo Pirri, Candido F. Porro, Samuele |
author_sort | Bejtka, Katarzyna |
collection | PubMed |
description | [Image: see text] Memristive devices based on a resistive switching mechanism are considered very promising for nonvolatile memory and unconventional computing applications, even though many details of the switching mechanisms are not yet fully understood. Here, we report a nanostructural study by means of high-resolution transmission electron microscopy and spectroscopy techniques of a Ag/ZnO/Pt memristive device. To ease the localization of the filament position for its characterization, we propose to use the guiding effect of regular perturbation arrays obtained by FIB technology to assist the filament formation. HRTEM and EDX were used to identify the composition and crystalline structure of the so-obtained conductive filaments and surrounding regions. It was determined that the conducting paths are composed mainly of monocrystalline Ag, which remains polycrystalline in some circumstances, including the zone where the switching occurs and at secondary filaments created at the grain boundaries of the polycrystalline ZnO matrix. We also observed that the ZnO matrix shows a degraded quality in the switching zone, while it remains unaltered in the rest of the memristive device. |
format | Online Article Text |
id | pubmed-8008384 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | American
Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-80083842021-03-31 TEM Nanostructural Investigation of Ag-Conductive Filaments in Polycrystalline ZnO-Based Resistive Switching Devices Bejtka, Katarzyna Milano, Gianluca Ricciardi, Carlo Pirri, Candido F. Porro, Samuele ACS Appl Mater Interfaces [Image: see text] Memristive devices based on a resistive switching mechanism are considered very promising for nonvolatile memory and unconventional computing applications, even though many details of the switching mechanisms are not yet fully understood. Here, we report a nanostructural study by means of high-resolution transmission electron microscopy and spectroscopy techniques of a Ag/ZnO/Pt memristive device. To ease the localization of the filament position for its characterization, we propose to use the guiding effect of regular perturbation arrays obtained by FIB technology to assist the filament formation. HRTEM and EDX were used to identify the composition and crystalline structure of the so-obtained conductive filaments and surrounding regions. It was determined that the conducting paths are composed mainly of monocrystalline Ag, which remains polycrystalline in some circumstances, including the zone where the switching occurs and at secondary filaments created at the grain boundaries of the polycrystalline ZnO matrix. We also observed that the ZnO matrix shows a degraded quality in the switching zone, while it remains unaltered in the rest of the memristive device. American Chemical Society 2020-06-08 2020-07-01 /pmc/articles/PMC8008384/ /pubmed/32508083 http://dx.doi.org/10.1021/acsami.0c05038 Text en Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Bejtka, Katarzyna Milano, Gianluca Ricciardi, Carlo Pirri, Candido F. Porro, Samuele TEM Nanostructural Investigation of Ag-Conductive Filaments in Polycrystalline ZnO-Based Resistive Switching Devices |
title | TEM
Nanostructural Investigation of Ag-Conductive
Filaments in Polycrystalline ZnO-Based Resistive Switching Devices |
title_full | TEM
Nanostructural Investigation of Ag-Conductive
Filaments in Polycrystalline ZnO-Based Resistive Switching Devices |
title_fullStr | TEM
Nanostructural Investigation of Ag-Conductive
Filaments in Polycrystalline ZnO-Based Resistive Switching Devices |
title_full_unstemmed | TEM
Nanostructural Investigation of Ag-Conductive
Filaments in Polycrystalline ZnO-Based Resistive Switching Devices |
title_short | TEM
Nanostructural Investigation of Ag-Conductive
Filaments in Polycrystalline ZnO-Based Resistive Switching Devices |
title_sort | tem
nanostructural investigation of ag-conductive
filaments in polycrystalline zno-based resistive switching devices |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8008384/ https://www.ncbi.nlm.nih.gov/pubmed/32508083 http://dx.doi.org/10.1021/acsami.0c05038 |
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