Reaction Mechanisms during Atomic Layer Deposition of AlF(3) Using Al(CH(3))(3) and SF(6) Plasma

[Image: see text] Metal fluorides generally demonstrate a wide band gap and a low refractive index, and they are commonly employed in optics and optoelectronics. Recently, an SF(6) plasma was introduced as a novel co-reactant for the atomic layer deposition (ALD) of metal fluorides. In this work, th...

Descripción completa

Detalles Bibliográficos
Autores principales: Vos, Martijn F. J., Knoops, Harm C. M., Kessels, Wilhelmus M. M., Mackus, Adriaan J. M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8016095/
https://www.ncbi.nlm.nih.gov/pubmed/33815650
http://dx.doi.org/10.1021/acs.jpcc.0c10695

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8016095/
https://www.ncbi.nlm.nih.gov/pubmed/33815650
http://dx.doi.org/10.1021/acs.jpcc.0c10695

Ejemplares similares