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Reaction Mechanisms during Atomic Layer Deposition of AlF(3) Using Al(CH(3))(3) and SF(6) Plasma

[Image: see text] Metal fluorides generally demonstrate a wide band gap and a low refractive index, and they are commonly employed in optics and optoelectronics. Recently, an SF(6) plasma was introduced as a novel co-reactant for the atomic layer deposition (ALD) of metal fluorides. In this work, th...

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Detalles Bibliográficos
Autores principales:	Vos, Martijn F. J., Knoops, Harm C. M., Kessels, Wilhelmus M. M., Mackus, Adriaan J. M.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2021
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8016095/ https://www.ncbi.nlm.nih.gov/pubmed/33815650 http://dx.doi.org/10.1021/acs.jpcc.0c10695

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