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Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf(1–x)Zr(x)O(2)
[Image: see text] Ferroelectric memories based on hafnium oxide are an attractive alternative to conventional memory technologies due to their scalability and energy efficiency. However, there are still many open questions regarding the optimal material stack and processing conditions for reliable d...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American
Chemical Society
2021
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8027987/ https://www.ncbi.nlm.nih.gov/pubmed/33625827 http://dx.doi.org/10.1021/acsami.1c01734 |