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Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf(1–x)Zr(x)O(2)

[Image: see text] Ferroelectric memories based on hafnium oxide are an attractive alternative to conventional memory technologies due to their scalability and energy efficiency. However, there are still many open questions regarding the optimal material stack and processing conditions for reliable d...

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Detalles Bibliográficos
Autores principales:	Athle, Robin, Persson, Anton E. O., Irish, Austin, Menon, Heera, Timm, Rainer, Borg, Mattias
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2021
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8027987/ https://www.ncbi.nlm.nih.gov/pubmed/33625827 http://dx.doi.org/10.1021/acsami.1c01734

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