Optical characteristics of type-II hexagonal-shaped GaSb quantum dots on GaAs synthesized using nanowire self-growth mechanism from Ga metal droplet

We report the growth mechanism and optical characteristics of type-II band-aligned GaSb quantum dots (QDs) grown on GaAs using a droplet epitaxy-driven nanowire formation mechanism with molecular beam epitaxy. Using transmission electron microscopy and scanning electron microscopy images, we confirm...

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Detalles Bibliográficos
Autores principales: Baik, Min, Kyhm, Ji-hoon, Kang, Hang-Kyu, Jeong, Kwang-Sik, Kim, Jong Su, Cho, Mann-Ho, Song, Jin Dong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8032789/
https://www.ncbi.nlm.nih.gov/pubmed/33833327
http://dx.doi.org/10.1038/s41598-021-87321-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8032789/
https://www.ncbi.nlm.nih.gov/pubmed/33833327
http://dx.doi.org/10.1038/s41598-021-87321-9

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