Cargando…
Growth of Semi-Polar (10 [Formula: see text] 3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE
Aluminum nitride (AlN) films were grown on the m-plane sapphire by high-temperature hydride vapor phase epitaxy (HVPE). The effect of high-temperature nitridation on the quality of AlN film was studied. The high-temperature nitridation is favorable for the formation of semi-polar single (10 [Formula...
Autores principales: | , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8036887/ https://www.ncbi.nlm.nih.gov/pubmed/33807424 http://dx.doi.org/10.3390/ma14071722 |