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Growth of Semi-Polar (10 [Formula: see text] 3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE

Aluminum nitride (AlN) films were grown on the m-plane sapphire by high-temperature hydride vapor phase epitaxy (HVPE). The effect of high-temperature nitridation on the quality of AlN film was studied. The high-temperature nitridation is favorable for the formation of semi-polar single (10 [Formula...

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Detalles Bibliográficos
Autores principales:	Li, Xu, Zhao, Jianyun, Liu, Ting, Lu, Yong, Zhang, Jicai
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8036887/ https://www.ncbi.nlm.nih.gov/pubmed/33807424 http://dx.doi.org/10.3390/ma14071722

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