Single Femtosecond Laser-Pulse-Induced Superficial Amorphization and Re-Crystallization of Silicon

Superficial amorphization and re-crystallization of silicon in <111> and <100> orientation after irradiation by femtosecond laser pulses (790 nm, 30 fs) are studied using optical imaging and transmission electron microscopy. Spectroscopic imaging ellipsometry (SIE) allows fast data acqui...

Descripción completa

Detalles Bibliográficos
Autores principales: Florian, Camilo, Fischer, Daniel, Freiberg, Katharina, Duwe, Matthias, Sahre, Mario, Schneider, Stefan, Hertwig, Andreas, Krüger, Jörg, Rettenmayr, Markus, Beck, Uwe, Undisz, Andreas, Bonse, Jörn
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8037179/
https://www.ncbi.nlm.nih.gov/pubmed/33801726
http://dx.doi.org/10.3390/ma14071651

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8037179/
https://www.ncbi.nlm.nih.gov/pubmed/33801726
http://dx.doi.org/10.3390/ma14071651

Ejemplares similares