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Single Femtosecond Laser-Pulse-Induced Superficial Amorphization and Re-Crystallization of Silicon

Superficial amorphization and re-crystallization of silicon in <111> and <100> orientation after irradiation by femtosecond laser pulses (790 nm, 30 fs) are studied using optical imaging and transmission electron microscopy. Spectroscopic imaging ellipsometry (SIE) allows fast data acqui...

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Detalles Bibliográficos
Autores principales:	Florian, Camilo, Fischer, Daniel, Freiberg, Katharina, Duwe, Matthias, Sahre, Mario, Schneider, Stefan, Hertwig, Andreas, Krüger, Jörg, Rettenmayr, Markus, Beck, Uwe, Undisz, Andreas, Bonse, Jörn
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8037179/ https://www.ncbi.nlm.nih.gov/pubmed/33801726 http://dx.doi.org/10.3390/ma14071651

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