Dry Etching Performance and Gas-Phase Parameters of C(6)F(12)O + Ar Plasma in Comparison with CF(4) + Ar

This research work deals with the comparative study of C(6)F(12)O + Ar and CF(4) + Ar gas chemistries in respect to Si and SiO(2) reactive-ion etching processes in a low power regime. Despite uncertain applicability of C(6)F(12)O as the fluorine-containing etchant gas, it is interesting because of t...

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Detalles Bibliográficos
Autores principales: Lim, Nomin, Choi, Yeon Sik, Efremov, Alexander, Kwon, Kwang-Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8037253/
https://www.ncbi.nlm.nih.gov/pubmed/33805202
http://dx.doi.org/10.3390/ma14071595

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8037253/
https://www.ncbi.nlm.nih.gov/pubmed/33805202
http://dx.doi.org/10.3390/ma14071595

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