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Dry Etching Performance and Gas-Phase Parameters of C(6)F(12)O + Ar Plasma in Comparison with CF(4) + Ar
This research work deals with the comparative study of C(6)F(12)O + Ar and CF(4) + Ar gas chemistries in respect to Si and SiO(2) reactive-ion etching processes in a low power regime. Despite uncertain applicability of C(6)F(12)O as the fluorine-containing etchant gas, it is interesting because of t...
Autores principales: | Lim, Nomin, Choi, Yeon Sik, Efremov, Alexander, Kwon, Kwang-Ho |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8037253/ https://www.ncbi.nlm.nih.gov/pubmed/33805202 http://dx.doi.org/10.3390/ma14071595 |
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