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Interfacial Doping Effects in Fluoropolymer-Tungsten Diselenide Composites Providing High-Performance P-Type Transistors
In this study, we investigated the p-doping effects of a fluoropolymer, Cytop, on tungsten diselenides (WSe(2)). The hole current of the Cytop–WSe(2) field-effect transistor (FET) was boosted by the C–F bonds of Cytop having a strong dipole moment, enabling increased hole accumulation. Analysis of t...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8037493/ https://www.ncbi.nlm.nih.gov/pubmed/33808061 http://dx.doi.org/10.3390/polym13071087 |