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Interfacial Doping Effects in Fluoropolymer-Tungsten Diselenide Composites Providing High-Performance P-Type Transistors

In this study, we investigated the p-doping effects of a fluoropolymer, Cytop, on tungsten diselenides (WSe(2)). The hole current of the Cytop–WSe(2) field-effect transistor (FET) was boosted by the C–F bonds of Cytop having a strong dipole moment, enabling increased hole accumulation. Analysis of t...

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Detalles Bibliográficos
Autores principales:	Lee, Hyeonji, Hong, Seongin, Yoo, Hocheon
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8037493/ https://www.ncbi.nlm.nih.gov/pubmed/33808061 http://dx.doi.org/10.3390/polym13071087

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