Resistive Switching Characteristic Improvement in a Single-Walled Carbon Nanotube Random Network Embedded Hydrogen Silsesquioxane Thin Films for Flexible Memristors

In this study, we evaluated the improved memristive switching characteristics of hydrogen silsesquioxane (HSQ) nanocomposites embedded with a single-walled carbon nanotube (SWCNT) random network. A low-temperature solution process was implemented using a flexible memristor device on a polyethylene n...

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Detalles Bibliográficos
Autores principales: Min, Shin-Yi, Cho, Won-Ju
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8037695/
https://www.ncbi.nlm.nih.gov/pubmed/33806206
http://dx.doi.org/10.3390/ijms22073390

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8037695/
https://www.ncbi.nlm.nih.gov/pubmed/33806206
http://dx.doi.org/10.3390/ijms22073390

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