Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy

Controlling electronic properties via band structure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, using LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the...

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Detalles Bibliográficos
Autores principales: Chatterjee, Shouvik, Khalid, Shoaib, Inbar, Hadass S., Goswami, Aranya, Guo, Taozhi, Chang, Yu-Hao, Young, Elliot, Fedorov, Alexei V., Read, Dan, Janotti, Anderson, Palmstrøm, Chris J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2021
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8046380/
https://www.ncbi.nlm.nih.gov/pubmed/33853778
http://dx.doi.org/10.1126/sciadv.abe8971

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8046380/
https://www.ncbi.nlm.nih.gov/pubmed/33853778
http://dx.doi.org/10.1126/sciadv.abe8971

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