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Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy
Controlling electronic properties via band structure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, using LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the...
| Autores principales: | , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Association for the Advancement of Science
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8046380/ https://www.ncbi.nlm.nih.gov/pubmed/33853778 http://dx.doi.org/10.1126/sciadv.abe8971 |