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Zinc Oxide Defect Microstructure and Surface Chemistry Derived from Oxidation of Metallic Zinc: Thin‐Film Transistor and Sensor Behavior of ZnO Films and Rods

Zinc oxide thin films are fabricated by controlled oxidation of sputtered zinc metal films on a hotplate in air at temperatures between 250 and 450 °C. The nanocrystalline films possess high relative densities and show preferential growth in (100) orientation. Integration in thin‐film transistors re...

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Autores principales: Hoffmann, Rudolf C., Sanctis, Shawn, Liedke, Maciej O., Butterling, Maik, Wagner, Andreas, Njel, Christian, Schneider, Jörg J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8048417/
https://www.ncbi.nlm.nih.gov/pubmed/33241921
http://dx.doi.org/10.1002/chem.202004270
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author Hoffmann, Rudolf C.
Sanctis, Shawn
Liedke, Maciej O.
Butterling, Maik
Wagner, Andreas
Njel, Christian
Schneider, Jörg J.
author_facet Hoffmann, Rudolf C.
Sanctis, Shawn
Liedke, Maciej O.
Butterling, Maik
Wagner, Andreas
Njel, Christian
Schneider, Jörg J.
author_sort Hoffmann, Rudolf C.
collection PubMed
description Zinc oxide thin films are fabricated by controlled oxidation of sputtered zinc metal films on a hotplate in air at temperatures between 250 and 450 °C. The nanocrystalline films possess high relative densities and show preferential growth in (100) orientation. Integration in thin‐film transistors reveals moderate charge carrier mobilities as high as 0.2 cm(2) V(−1)s(−1). The semiconducting properties depend on the calcination temperature, whereby the best performance is achieved at 450 °C. The defect structure of the thin ZnO film can be tracked by Doppler‐broadening positron annihilation spectroscopy as well as positron lifetime studies. Comparably long positron lifetimes suggest interaction of zinc vacancies (V(Zn)) with one or more oxygen vacancies (V(O)) in larger structural entities. Such V(O)‐V(Zn) defect clusters act as shallow acceptors, and thus, reduce the overall electron conductivity of the film. The concentration of these defect clusters decreases at higher calcination temperatures as indicated by changes in the S and W parameters. Such zinc oxide films obtained by conversion of metallic zinc can also be used as seed layers for solution deposition of zinc oxide nanowires employing a mild microwave‐assisted process. The functionality of the obtained nanowire arrays is tested in a UV sensor device. The best results with respect to sensor sensitivity are achieved with thinner seed layers for device construction.
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spelling pubmed-80484172021-04-16 Zinc Oxide Defect Microstructure and Surface Chemistry Derived from Oxidation of Metallic Zinc: Thin‐Film Transistor and Sensor Behavior of ZnO Films and Rods Hoffmann, Rudolf C. Sanctis, Shawn Liedke, Maciej O. Butterling, Maik Wagner, Andreas Njel, Christian Schneider, Jörg J. Chemistry Full Papers Zinc oxide thin films are fabricated by controlled oxidation of sputtered zinc metal films on a hotplate in air at temperatures between 250 and 450 °C. The nanocrystalline films possess high relative densities and show preferential growth in (100) orientation. Integration in thin‐film transistors reveals moderate charge carrier mobilities as high as 0.2 cm(2) V(−1)s(−1). The semiconducting properties depend on the calcination temperature, whereby the best performance is achieved at 450 °C. The defect structure of the thin ZnO film can be tracked by Doppler‐broadening positron annihilation spectroscopy as well as positron lifetime studies. Comparably long positron lifetimes suggest interaction of zinc vacancies (V(Zn)) with one or more oxygen vacancies (V(O)) in larger structural entities. Such V(O)‐V(Zn) defect clusters act as shallow acceptors, and thus, reduce the overall electron conductivity of the film. The concentration of these defect clusters decreases at higher calcination temperatures as indicated by changes in the S and W parameters. Such zinc oxide films obtained by conversion of metallic zinc can also be used as seed layers for solution deposition of zinc oxide nanowires employing a mild microwave‐assisted process. The functionality of the obtained nanowire arrays is tested in a UV sensor device. The best results with respect to sensor sensitivity are achieved with thinner seed layers for device construction. John Wiley and Sons Inc. 2021-01-22 2021-03-22 /pmc/articles/PMC8048417/ /pubmed/33241921 http://dx.doi.org/10.1002/chem.202004270 Text en © 2020 The Authors. Chemistry - A European Journal published by Wiley-VCH GmbH https://creativecommons.org/licenses/by-nc-nd/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by-nc-nd/4.0/ (https://creativecommons.org/licenses/by-nc-nd/4.0/) License, which permits use and distribution in any medium, provided the original work is properly cited, the use is non‐commercial and no modifications or adaptations are made.
spellingShingle Full Papers
Hoffmann, Rudolf C.
Sanctis, Shawn
Liedke, Maciej O.
Butterling, Maik
Wagner, Andreas
Njel, Christian
Schneider, Jörg J.
Zinc Oxide Defect Microstructure and Surface Chemistry Derived from Oxidation of Metallic Zinc: Thin‐Film Transistor and Sensor Behavior of ZnO Films and Rods
title Zinc Oxide Defect Microstructure and Surface Chemistry Derived from Oxidation of Metallic Zinc: Thin‐Film Transistor and Sensor Behavior of ZnO Films and Rods
title_full Zinc Oxide Defect Microstructure and Surface Chemistry Derived from Oxidation of Metallic Zinc: Thin‐Film Transistor and Sensor Behavior of ZnO Films and Rods
title_fullStr Zinc Oxide Defect Microstructure and Surface Chemistry Derived from Oxidation of Metallic Zinc: Thin‐Film Transistor and Sensor Behavior of ZnO Films and Rods
title_full_unstemmed Zinc Oxide Defect Microstructure and Surface Chemistry Derived from Oxidation of Metallic Zinc: Thin‐Film Transistor and Sensor Behavior of ZnO Films and Rods
title_short Zinc Oxide Defect Microstructure and Surface Chemistry Derived from Oxidation of Metallic Zinc: Thin‐Film Transistor and Sensor Behavior of ZnO Films and Rods
title_sort zinc oxide defect microstructure and surface chemistry derived from oxidation of metallic zinc: thin‐film transistor and sensor behavior of zno films and rods
topic Full Papers
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8048417/
https://www.ncbi.nlm.nih.gov/pubmed/33241921
http://dx.doi.org/10.1002/chem.202004270
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