A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM

We report the first study on doping assessment in Te-doped GaAsSb nanowires (NWs) with variation in Gallium Telluride (GaTe) cell temperature, using X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), conductive-atomic force microscopy (C-AFM), and scanning Kelvin p...

Descripción completa

Detalles Bibliográficos
Autores principales: Ramaswamy, Priyanka, Devkota, Shisir, Pokharel, Rabin, Nalamati, Surya, Stevie, Fred, Jones, Keith, Reynolds, Lew, Iyer, Shanthi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8050051/
https://www.ncbi.nlm.nih.gov/pubmed/33859310
http://dx.doi.org/10.1038/s41598-021-87825-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8050051/
https://www.ncbi.nlm.nih.gov/pubmed/33859310
http://dx.doi.org/10.1038/s41598-021-87825-4

Ejemplares similares