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A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM
We report the first study on doping assessment in Te-doped GaAsSb nanowires (NWs) with variation in Gallium Telluride (GaTe) cell temperature, using X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), conductive-atomic force microscopy (C-AFM), and scanning Kelvin p...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8050051/ https://www.ncbi.nlm.nih.gov/pubmed/33859310 http://dx.doi.org/10.1038/s41598-021-87825-4 |