Parameter study of the high temperature MOCVD numerical model for AlN growth using orthogonal test design

We investigated the process parameters of the high temperature MOCVD (HT-MOCVD) numerical model for the AlN growth based on CFD simulation using orthogonal test design. It is believed that high temperature growth condition is favorable for improving efficiency and crystallization quality for AlN fil...

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Detalles Bibliográficos
Autores principales: An, Jiadai, Dai, Xianying, Feng, Lansheng, Zheng, Jieming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8065108/
https://www.ncbi.nlm.nih.gov/pubmed/33893341
http://dx.doi.org/10.1038/s41598-021-87554-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8065108/
https://www.ncbi.nlm.nih.gov/pubmed/33893341
http://dx.doi.org/10.1038/s41598-021-87554-8

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