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Parameter study of the high temperature MOCVD numerical model for AlN growth using orthogonal test design
We investigated the process parameters of the high temperature MOCVD (HT-MOCVD) numerical model for the AlN growth based on CFD simulation using orthogonal test design. It is believed that high temperature growth condition is favorable for improving efficiency and crystallization quality for AlN fil...
Autores principales: | An, Jiadai, Dai, Xianying, Feng, Lansheng, Zheng, Jieming |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8065108/ https://www.ncbi.nlm.nih.gov/pubmed/33893341 http://dx.doi.org/10.1038/s41598-021-87554-8 |
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