Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH(3) Growth Interruption

We demonstrate the highly efficient, GaN-based, multiple-quantum-well light-emitting diodes (LEDs) grown on Si (111) substrates embedded with the AlN buffer layer using NH(3) growth interruption. Analysis of the materials by the X-ray diffraction omega scan and transmission electron microscopy revea...

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Detalles Bibliográficos
Autores principales: Kim, Sang-Jo, Oh, Semi, Lee, Kwang-Jae, Kim, Sohyeon, Kim, Kyoung-Kook
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8065706/
https://www.ncbi.nlm.nih.gov/pubmed/33916339
http://dx.doi.org/10.3390/mi12040399

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8065706/
https://www.ncbi.nlm.nih.gov/pubmed/33916339
http://dx.doi.org/10.3390/mi12040399

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