Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation

We investigated the sensing characteristics of NO(2) gas sensors based on Pd-AlGaN/GaN high electron mobility transistors (HEMTs) at high temperatures. In this paper, we demonstrated the optimization of the sensing performance by the gate bias, which exhibited the advantage of the FET-type sensors c...

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Detalles Bibliográficos
Autores principales: Nguyen, Van Cuong, Kim, Kwangeun, Kim, Hyungtak
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8066909/
https://www.ncbi.nlm.nih.gov/pubmed/33916387
http://dx.doi.org/10.3390/mi12040400

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8066909/
https://www.ncbi.nlm.nih.gov/pubmed/33916387
http://dx.doi.org/10.3390/mi12040400

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