Effect of Thermal Annealing on the Photoluminescence of Dense Si Nanodots Embedded in Amorphous Silicon Nitride Films

Luminescent amorphous silicon nitride-containing dense Si nanodots were prepared by using very-high-frequency plasma-enhanced chemical vapor deposition at 250 °C. The influence of thermal annealing on photoluminescence (PL) was studied. Compared with the pristine film, thermal annealing at 1000 °C g...

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Detalles Bibliográficos
Autores principales: Liu, Qianqian, Chen, Xiaoxuan, Li, Hongliang, Guo, Yanqing, Song, Jie, Zhang, Wenxing, Song, Chao, Huang, Rui, Lin, Zewen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8067207/
https://www.ncbi.nlm.nih.gov/pubmed/33806198
http://dx.doi.org/10.3390/mi12040354

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8067207/
https://www.ncbi.nlm.nih.gov/pubmed/33806198
http://dx.doi.org/10.3390/mi12040354

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