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Effect of Thermal Annealing on the Photoluminescence of Dense Si Nanodots Embedded in Amorphous Silicon Nitride Films
Luminescent amorphous silicon nitride-containing dense Si nanodots were prepared by using very-high-frequency plasma-enhanced chemical vapor deposition at 250 °C. The influence of thermal annealing on photoluminescence (PL) was studied. Compared with the pristine film, thermal annealing at 1000 °C g...
Autores principales: | Liu, Qianqian, Chen, Xiaoxuan, Li, Hongliang, Guo, Yanqing, Song, Jie, Zhang, Wenxing, Song, Chao, Huang, Rui, Lin, Zewen |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8067207/ https://www.ncbi.nlm.nih.gov/pubmed/33806198 http://dx.doi.org/10.3390/mi12040354 |
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