Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD

This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and s...

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Detalles Bibliográficos
Autores principales: Du, Yong, Kong, Zhenzhen, Toprak, Muhammet S., Wang, Guilei, Miao, Yuanhao, Xu, Buqing, Yu, Jiahan, Li, Ben, Lin, Hongxiao, Han, Jianghao, Dong, Yan, Wang, Wenwu, Radamson, Henry H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8067383/
https://www.ncbi.nlm.nih.gov/pubmed/33917367
http://dx.doi.org/10.3390/nano11040928

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8067383/
https://www.ncbi.nlm.nih.gov/pubmed/33917367
http://dx.doi.org/10.3390/nano11040928

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