Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside

Sapphire and silicon carbide substrates are used for growth of the III-N group heterostructures to obtain the electronic devices for high power and high frequency applications. Laser micromachining of deep channels in the frontside of the transparent wafers followed by mechanical cleavage along the...

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Detalles Bibliográficos
Autores principales: Indrišiūnas, Simonas, Svirplys, Evaldas, Jorudas, Justinas, Kašalynas, Irmantas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8067609/
https://www.ncbi.nlm.nih.gov/pubmed/33917633
http://dx.doi.org/10.3390/mi12040407

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8067609/
https://www.ncbi.nlm.nih.gov/pubmed/33917633
http://dx.doi.org/10.3390/mi12040407

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