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Investigate on the Mechanism of HfO(2)/Si(0.7)Ge(0.3) Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods
The interface passivation of the HfO(2)/Si(0.7)Ge(0.3) stack is systematically investigated based on low-temperature ozone oxidation and Si-cap methods. Compared with the Al(2)O(3)/Si(0.7)Ge(0.3) stack, the dispersive feature and interface state density (D(it)) of the HfO(2)/Si(0.7)Ge(0.3) stack MOS...
Autores principales: | , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8069334/ https://www.ncbi.nlm.nih.gov/pubmed/33918553 http://dx.doi.org/10.3390/nano11040955 |