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Investigate on the Mechanism of HfO(2)/Si(0.7)Ge(0.3) Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods

The interface passivation of the HfO(2)/Si(0.7)Ge(0.3) stack is systematically investigated based on low-temperature ozone oxidation and Si-cap methods. Compared with the Al(2)O(3)/Si(0.7)Ge(0.3) stack, the dispersive feature and interface state density (D(it)) of the HfO(2)/Si(0.7)Ge(0.3) stack MOS...

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Detalles Bibliográficos
Autores principales:	Yao, Qide, Ma, Xueli, Wang, Hanxiang, Wang, Yanrong, Wang, Guilei, Zhang, Jing, Liu, Wenkai, Wang, Xiaolei, Yan, Jiang, Li, Yongliang, Wang, Wenwu
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8069334/ https://www.ncbi.nlm.nih.gov/pubmed/33918553 http://dx.doi.org/10.3390/nano11040955

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