Properties and Mechanism of PEALD-In(2)O(3) Thin Films Prepared by Different Precursor Reaction Energy

Indium oxide (In(2)O(3)) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In(2)O(3) film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable...

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Detalles Bibliográficos
Autores principales: Zhao, Ming-Jie, Zhang, Zhi-Xuan, Hsu, Chia-Hsun, Zhang, Xiao-Ying, Wu, Wan-Yu, Lien, Shui-Yang, Zhu, Wen-Zhang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8070178/
https://www.ncbi.nlm.nih.gov/pubmed/33920231
http://dx.doi.org/10.3390/nano11040978

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8070178/
https://www.ncbi.nlm.nih.gov/pubmed/33920231
http://dx.doi.org/10.3390/nano11040978

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