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Properties and Mechanism of PEALD-In(2)O(3) Thin Films Prepared by Different Precursor Reaction Energy
Indium oxide (In(2)O(3)) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In(2)O(3) film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable...
Autores principales: | Zhao, Ming-Jie, Zhang, Zhi-Xuan, Hsu, Chia-Hsun, Zhang, Xiao-Ying, Wu, Wan-Yu, Lien, Shui-Yang, Zhu, Wen-Zhang |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8070178/ https://www.ncbi.nlm.nih.gov/pubmed/33920231 http://dx.doi.org/10.3390/nano11040978 |
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