Investigation of Normally-Off p-GaN/AlGaN/GaN HEMTs Using a Self-Terminating Etching Technique with Multi-Finger Architecture Modulation for High Power Application

Normally-off p-gallium nitride (GaN) high electron mobility transistor (HEMT) devices with multi-finger layout were successfully fabricated by use of a self-terminating etching technique with Cl(2)/BCl(3)/SF(6)-mixed gas plasma. This etching technique features accurate etching depth control and low...

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Detalles Bibliográficos
Autores principales: Chang, Ya-Chun, Ho, Yu-Li, Huang, Tz-Yan, Huang, Ding-Wei, Wu, Chao-Hsin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8070762/
https://www.ncbi.nlm.nih.gov/pubmed/33919816
http://dx.doi.org/10.3390/mi12040432

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8070762/
https://www.ncbi.nlm.nih.gov/pubmed/33919816
http://dx.doi.org/10.3390/mi12040432

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