Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions

In this study, 4H-SiC p–n junctions were irradiated with 700 keV He(+) ions in the fluence range 1.0 × 10(12) to 1.0 × 10(15) ions/cm(2). The effects of irradiation were investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements, while deep-level transient spectroscopy (DLTS) w...

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Detalles Bibliográficos
Autores principales: Pellegrino, Domenico, Calcagno, Lucia, Zimbone, Massimo, Di Franco, Salvatore, Sciuto, Antonella
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8070934/
https://www.ncbi.nlm.nih.gov/pubmed/33919896
http://dx.doi.org/10.3390/ma14081966

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8070934/
https://www.ncbi.nlm.nih.gov/pubmed/33919896
http://dx.doi.org/10.3390/ma14081966

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