A Theoretical and Simulation Analysis of the Sensitivity of SiNWs-FET Sensors

Theoretical study and software simulation on the sensitivity of silicon nanowires (SiNWs) field effect transistor (FET) sensors in terms of surface-to-volume ratio, depletion ratio, surface state and lattice quality are carried out. Generally, SiNWs-FET sensors with triangular cross-sections are mor...

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Detalles Bibliográficos
Autores principales: Yang, Yi, Lu, Zicheng, Liu, Duo, Wang, Yuelin, Chen, Shixing, Li, Tie
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8071106/
https://www.ncbi.nlm.nih.gov/pubmed/33920811
http://dx.doi.org/10.3390/bios11040121

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8071106/
https://www.ncbi.nlm.nih.gov/pubmed/33920811
http://dx.doi.org/10.3390/bios11040121

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