Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p(+)n(−)n Diodes: The Road to Reliable Vertical MOSFETs

This work investigates p(+)n(−)n GaN-on-Si vertical structures, through dedicated measurements and TCAD simulations, with the ultimate goal of identifying possible strategies for leakage and breakdown optimization. First, the dominant leakage processes were identified through temperature-dependent c...

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Detalles Bibliográficos
Autores principales: Mukherjee, Kalparupa, De Santi, Carlo, Buffolo, Matteo, Borga, Matteo, You, Shuzhen, Geens, Karen, Bakeroot, Benoit, Decoutere, Stefaan, Gerosa, Andrea, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8072673/
https://www.ncbi.nlm.nih.gov/pubmed/33923422
http://dx.doi.org/10.3390/mi12040445

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8072673/
https://www.ncbi.nlm.nih.gov/pubmed/33923422
http://dx.doi.org/10.3390/mi12040445

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