Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells

An increase of integrated photoluminescence (PL) intensity has been observed in a GaN-based multiple quantum wells (MQWs) sample. The integrated intensity of TDPL spectra forms an anomalous variation: it decreases from 30 to 100 K, then increases abnormally from 100 to 140 K and decreases again when...

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Detalles Bibliográficos
Autores principales: Ben, Yuhao, Liang, Feng, Zhao, Degang, Wang, Xiaowei, Yang, Jing, Liu, Zongshun, Chen, Ping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8074106/
https://www.ncbi.nlm.nih.gov/pubmed/33923643
http://dx.doi.org/10.3390/nano11041023

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8074106/
https://www.ncbi.nlm.nih.gov/pubmed/33923643
http://dx.doi.org/10.3390/nano11041023

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