Cargando…
Interface induced diffusion
Interface induced diffusion had been identified in a thin film system damaged by electron bombardment. This new phenomenon was observed in Al(2)O(3) (some nm thick)/Si substrate system, which was subjected to low energy (5 keV) electron bombardment producing defects in the Al(2)O(3) layer. The defec...
| Autores principales: | , , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8084996/ https://www.ncbi.nlm.nih.gov/pubmed/33927332 http://dx.doi.org/10.1038/s41598-021-88808-1 |