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Reduction of dislocations in α-Ga(2)O(3) epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate
The compound α-Ga(2)O(3) is an ultra-wide-bandgap semiconductor and possesses outstanding properties such as a high breakdown voltage and symmetry compared with other phases. It has been studied for applications in high-performance power devices. However, it is difficult to obtain a high-quality thi...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
International Union of Crystallography
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8086155/ https://www.ncbi.nlm.nih.gov/pubmed/33953932 http://dx.doi.org/10.1107/S2052252521003389 |